Overview VICENTE MUÑOZ SANJOSÉ

Research fields Electromagnetic field diffusion in ferromagnetic materials (1980-1984) Characterizacion of high Tc superconductors (1987-1989) Crystal growth and characterization of materials (1987-

UNIVERSITAT DE VALÈNCIA Electromagnetic field diffusion in ferromagnetic materials UNIVERSITAT DE VALÈNCIA Electromagnetic field diffusion in a ferromagnetic half space: analytical solution Electromagnetic field diffusion: numerical solution

Electromagnetic field diffusion in ferromagnetic materials Design and installation of a system for the measurement of hysteresis loops Static and dynamic behaviour Study and modellitation of hysteresis loops Study of the diffusion equation Analytical aproach Numerical aproach Experimental and theoretical study of power losses in ferromagnetic materials Advisory Prof. V. Such

Synthesis and characterization of high Tc superconductors “Preparación y caracterización de capas delgadas de óxidos mixtos superconductores de los sistemas Bi-Sr-Ca-Cu-O y Tl-Ba-Ca-Cu-O mediante técnicas de evaporación en vacío ” Programa Midas Objectives Advisory Prof. A. Segura Synthesis of BiSrCaCuO and Tl-Ba-Ca-Cu-O compounds Study of the resistivity as a function of temperature Determination of critic temperature and current

Crystal growth laboratory Crystal growth and characterization of semiconductors Crystal growth laboratory Bulk crystals Sample preparation Epitaxial layers

Crystal growth and characterization of semiconductors III-VI Materials II-VI Materials Other Materials

UNIVERSITAT DE VALÈNCIA Crystal growth and characterization of semiconductors UNIVERSITAT DE VALÈNCIA III-VI SEMICONDUCTORS Objectives Crystal growth of III-VI materials Study of physical properties Physical properties under high presure Advisory Prof. A. Segura Collaborations Teams of Prof R. Pareja Prof. A. Chevy Actividad investigadora

UNIVERSITAT DE VALÈNCIA Crystal growth and characterization of Semiconductors (III-VI) UNIVERSITAT DE VALÈNCIA “Crecimiento, caracterización y aplicaciones de nuevos materiales semiconductores” CICYT PA86-294 “Crecimiento, caracterización y aplicaciones de semiconductores para la óptica no lineal” CICYT MAT90-0242 “Estudio de propiedades estructurales, ópticas, magnéticas y de transporte de semiconductores bajo altas presiones”

Crystal growth and characterization of Semiconductors (III-VI) InSe GaS III-VI Materials Dopado InxGa1-xSe GaTe GaSe Actividad investigadora

Actividad investigadora II-VI Materials Actividad investigadora

II-VI SEMICONDUCTORS Crystal growth and characterization of Objectives Crystal growth (bulk and layers) Alternative methods to the crystal growth and study of optimal conditions Hidrodynamical study of growth processes Study of defects and correlation with growth conditions Luminescence and cathodoluminescence of II-VI materials. Potential aplications Advisory V. Muñoz-Sanjose Collaborations Teams of Prof. J.A. García Prof. J. Piqueras Prof A. Segura Actividad investigadora

Crystal growth and characterizartion of Semiconductors (III-VI) “Crecimiento cristalino y caracterización de cristales semiconductores II-VI, aleaciones y materiales semimagnéticos IIVI-MnVI” (GV-2005/94) “Crecimiento cristalino caracterización y aplicaciones de compuestos II-VI y aleaciones” (MAT98-0975-C02-01) “Crecimiento de capas epitaxiales de semiconductores II-VI y aleaciones a partir de la pirólisis de compuestos organometálicos MOCVD. Aplicaciones a la fotodetección” (1FD97-0086)

Crystal growth and characterizartion of Semiconductors (III-VI) “Crecimiento cristalino, caracterización y aplicaciones de capas epitaxiales de semiconductores II-VI (GV01-536) “Crecimiento cristalino y caracterización del óxido de zinc” M .E.C.( MAT 2001-2920-C03-01) “Semiconductor oxides for UV optoelectronics, surface acoustics and spintronics CE (Thematic Network) (G5RT-CT-2002-05075)

Crystal growth and characterizartion of Semiconductors (III-VI) “Materiales para la optoelectrónica: el óxido de cinc, crecimiento cristalino y caracterización.” Acción integrada hispano-francesa (Picasso) HF2001-0066 “Crecimiento cristalino, caracterización y aplicaciones de semiconductores II-VI” Generalitat Valenciana CTGCA/2002/3-7 “Crecimiento cristalino, caracterización y aplicaciones de capas epitaxiales” Generalitat Valenciana Acciones Especiales 2003

Crystal growth and characterization of Semiconductors HgTe HgxCd1-xTe CdTe II-VI Materials HgxZn1-xTe CdxZn1-xTe ZnTe ZnTexSe1-x ZnSe

Crystal growth and characterization of Semiconductors Other materials Objectives Advisory V. Muñoz-Sanjosé Collaborations Teams of Prof A. Segura Prof. J.A. García Dr. I. Terry Dr. R. Triboulet Crystal growth of semimagnetic materials Crystal growth of materials with punctual interest New approachs to the growth techniques Collaborations

Crystal growth and characterization of Semiconductors (semimagnetic and other materials) Crecimiento cristalino y caracterización de cristales semiconductores II-VI, aleaciones y materiales semimagnéticos IIVI-MnVI (GV-2005/94)

Crystal growth and characterization of Semiconductors (semimagnetic and other materials) HgxMn1-xTe MnTe CdxMn1-xTe Crystal growth of other materials PbTe Zn3P2 ZnxCo1-xSe Actividad investigadora

Experimental facilities

Crystal growth laboratory. Bulk materials Crystal growth laboratory: Epitaxial layers Other equipments

Crystal growth laboratory. Bulk materials Synthesis of materials Bridgman method. Horizontal and vertical configurations Vapor phase transport: PVT CVT Piper - Polish Solution methods: Traveling Heater Method (THM) y Cold Traveling Heater Method (CTHM) Solid phase recrystallization (SPR)

Current Projects Crystal growth, characterization and aplications of II-VI epitaxial layers Crystal growth and characterization of ZnO and based materials Semiconductor oxides for UV optoelectronics, surface acoustics and spintronics