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Publicada porTomás Cano Chávez Modificado hace 7 años
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Radiation Effects Front end electronics for the Inner Detector (IBM’s 0.13 SiGe technologies) Rad hardness validation (Inner Detector + LAr Calorimeter) FE-IC. Characterization including Rad. Hardness In collaboration with SiGe group (SCIPP, UPenn, BNL, LBL, …) Low dose rate tests (ELDRS )
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Radiation Effects Radiation hardness of SiGe BiCMOS technologies (IHP’s 0.25 + 0.13 SiGe technologies) Understanding radiation degradation mechanisms RF degradation Other devices (R, MOS, oscillators…) Radiation degradation simulation Modelado
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Irradiation Results – IHP β N = β f /β 0 : Normalised Current Gain @ V BE = 0.7V Gammas Neutrons Protons
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Irradiation bias influence Other results on radiation damage Radiation damage modeling V BE (V) I B (A) R 2 = 0.49 Additivity of displacement and ionization: Long term annealing
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Work plan 1: effect of interface traps @ Si/SiO 2 Base-Emitter spacer interface -- Acceptor-like ; E Nit =0.2eV above mid-gap ; Electron capture cross-section = 10 -15 cm -2 ; Hole capture cross-section = 10 -15 cm -2 (from Ma) Increase of base recombination current On good way to agreement with experimental results Increased irradiation dose Increased Nit concentration
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Radiation Effects DC-DC converters for efficient power distribution LDMOS technologies evaluation. In collaboration with CERN’s microelectr. group (Federico Faccio) Understanding degradation mechanisms Simulation GaN
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Curves P-LDMOS Device evolution at 5 different fluences
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Figuras de mérito: Annealing neutrones FINAL Nline (final de annealing) Aumento de ΔV TH tras el annealing a T ambiente y reducción tras el annealing a 100 º C Reducción gradual de ΔR ON hasta un valor final de ~15% Reducción gradual de I D0 con el annealing hasta un factor 10 Annealing aumenta ΔV TH pero reduce la degradación en el resto de parámetros. Annealing a alta T beneficioso en todos los casos Nline
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Figuras de mérito: Annealing neutrones FINAL Pmin (final de annealing) Aumento de ΔV TH hasta +50 mV con el annealing a 100 º C Valor final de ΔR ON vuelve a 500 % tras el annealing a 100 º C ID 0 mejora tras annealing a alta T Annealing a alta T parece ser perjudicial en general Necesario explorar la región 1x10 15 -5x10 15 Pmin
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IHP’s LDMOS devices simulation Initial 2D technological and electrical simulations of a N-LDMOS device (pre-irrad). As starting point for radiation damage simulations Electric field distribution at breakdown (V G = 2.5 V and V D = 17.5 V) NLDMOS structure Electrical results:
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- A uniform trap concentration has been considered. - The degradation of the on-state resistance has been qualitatively predicted - More insight into defects dynamics has to be achieved Simulation of Neutron Irradiation
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GaN Satish K Dhawan Yale University
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GaN Satish K Dhawan Yale University
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GaN New devices in the market from EPC http://epc-co.com/epc/ToolsandDesignSupport/ProductTraining.aspx V B = 80 V – 100 V High frecuency smaller inductor Dispositivos “normaly-off” & “enhancement mode” MOS-like Rad-hardness??
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Colaborar con Valencia Hay cosas que sólo pueden pasar allí…
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